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W9816G6IH 512K x 2 BANKS x 16 BITS SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION ......................................................................................................... 3 FEATURES ................................................................................................................................. 3 AVAILABLE PART NUMBER ..................................................................................................... 3 PIN CONFIGURATION ............................................................................................................... 4 PIN DESCRIPTION..................................................................................................................... 5 BLOCK DIAGRAM ...................................................................................................................... 6 FUNCTIONAL DESCRIPTION ................................................................................................... 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 7.12 7.13 7.14 7.15 7.16 7.17 7.18 7.19 7.20 8. 9. Power Up and Initialization ............................................................................................. 7 Programming Mode Register.......................................................................................... 7 Bank Activate Command ................................................................................................ 7 Read and Write Access Modes ...................................................................................... 7 Burst Read Command .................................................................................................... 8 Burst Write Command .................................................................................................... 8 Read Interrupted by a Read ........................................................................................... 8 Read Interrupted by a Write............................................................................................ 8 Write Interrupted by a Write............................................................................................ 8 Write Interrupted by a Read............................................................................................ 8 Burst Stop Command ..................................................................................................... 9 Addressing Sequence of Sequential Mode .................................................................... 9 Addressing Sequence of Interleave Mode ..................................................................... 9 Auto-precharge Command ........................................................................................... 10 Precharge Command.................................................................................................... 10 Self Refresh Command ................................................................................................ 10 Power Down Mode ....................................................................................................... 11 No Operation Command............................................................................................... 11 Deselect Command ...................................................................................................... 11 Clock Suspend Mode.................................................................................................... 11
OPERATION MODE ................................................................................................................. 12 ELECTRICAL CHARACTERISTICS......................................................................................... 13 9.1 9.2 9.3 Absolute Maximum Ratings .......................................................................................... 13 Recommended DC Operating Conditions .................................................................... 13 Capacitance .................................................................................................................. 13 Publication Release Date:May 05, 2008 Revision A01
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9.4 9.5 10. 10.1 10.2 10.3 10.4 11. 11.1 11.2 11.3 11.4 11.5 11.6 11.7 11.8 11.9 11.10 11.11 11.12 11.13 11.14 11.15 11.16 11.17 11.18 11.19 11.20 11.21 11.22 12. 13. 12.1 DC Characteristics........................................................................................................ 14 AC Characteristics ........................................................................................................ 15 Command Input Timing ................................................................................................ 17 Read Timing.................................................................................................................. 18 Control Timing of Input/Output Data............................................................................. 19 Mode Register Set Cycle .............................................................................................. 20 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)...................................... 21 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge)........... 22 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)...................................... 23 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge)........... 24 Interleaved Bank Write (Burst Length = 8) ................................................................... 25 Interleaved Bank Write (Burst Length = 8, Auto-precharge) ........................................ 26 Page Mode Read (Burst Length = 4, CAS Latency = 3) .............................................. 27 Page Mode Read / Write (Burst Length = 8, CAS Latency = 3)................................... 28 Auto Precharge Read (Burst Length = 4, CAS Latency = 3)........................................ 29 Auto Precharge Write (Burst Length = 4).................................................................... 30 Auto Refresh Cycle ..................................................................................................... 31 Self Refresh Cycle....................................................................................................... 32 Burst Read and Single Write (Burst Length = 4, CAS Latency = 3) ........................... 33 Power Down Mode ...................................................................................................... 34 Auto-precharge Timing (Read Cycle) ......................................................................... 35 Auto-precharge Timing (Write Cycle).......................................................................... 36 Timing Chart of Read to Write Cycle........................................................................... 37 Timing Chart of Write to Read Cycle........................................................................... 37 Timing Chart of Burst Stop Cycle (Burst Stop Command).......................................... 38 Timing Chart of Burst Stop Cycle (Precharge Command).......................................... 38 CKE/DQM Input Timing (Write Cycle)......................................................................... 39 CKE/DQM Input Timing (Read Cycle)......................................................................... 40 50L-TSOP (II) 400 mill .................................................................................................. 41
TIMING WAVEFORMS ............................................................................................................. 17
OPERATING TIMING EXAMPLE ............................................................................................. 21
PACKAGE SPECIFICATION .................................................................................................... 41 REVISION HISTORY ................................................................................................................ 42
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1. GENERAL DESCRIPTION
W9816G6IH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. W9816G6IH delivers a data bandwidth of up to 200M words per second (-5). For different applications the W9816G6IH is sorted into the following speed grades: -5/6/-7/-6I and -7I. The -5 parts can run up to 200MHz/CL3 or 143MHz/CL2. The -6/-6I parts can run up to 166MHz/CL3 (the -6I grade which is guaranteed to support -40C ~ 85C). The -7/-7I parts can run up to 143MHz/CL3 (the -7I grade which is guaranteed to support -40C ~ 85C). Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time. By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9816G6IH is ideal for main memory in high performance applications.
2. FEATURES
* * * * * * * * * * * * 2.7V~3.6V power supply for -7/-7I speed grades 3.3V 0.3V power supply for -5/-6/-6I speed grades 524,288 words x 2 banks x 16 bits organization Self Refresh current: standard and low power CAS Latency: 2 and 3 Burst Length: 1, 2, 4, 8 and Full Page Burst Read, Single Writes Mode Byte Data Controlled by LDQM, UDQM Auto-precharge and Controlled Precharge 4K Refresh Cycles/64 mS Interface: LVTTL Packaged in 50-pin, 400 mil TSOP II, using Lead free materials with RoHS compliant
3. AVAILABLE PART NUMBER
PART NUMBER SPEED GRADE SELF REFRESH CURRENT (MAX.) OPERATING TEMPERATURE
W9816G6IH-5 W9816G6IH-6 W9816G6IH-7 W9816G6IH-6I W9816G6IH-7I
200MHz/CL3 or 143MHz/CL2 166MHz/CL3 143MHz/CL3 166MHz/CL3 143MHz/CL3
2mA 2mA 2mA 2mA 2mA
0C ~ 70C 0C ~ 70C 0C ~ 70C -40C ~ 85C -40C ~ 85C
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4. PIN CONFIGURATION
VCC DQ0 DQ1 VSS Q DQ2 DQ3 VCCQ DQ4 DQ5 VSS Q DQ6 DQ7 VCCQ LDQM WE CAS RAS CS BA A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 VSS DQ15 DQ14 VSS Q DQ13 DQ12 VCCQ DQ11 DQ10 VSS Q DQ9 DQ8 VCCQ NC UDQM CLK CKE NC A9 A8 A7 A6 A5 A4 V SS
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5. PIN DESCRIPTION
PIN NUMBER PIN NAME FUNCTION DESCRIPTION
20-24, 27-32 19
A0-A10 BA
Address Bank Select
Multiplexed pins for row and column address. Row address: A0-A10. Column address: A0-A7. Select bank to activate during row address latch time, or bank to read/write during column address latch time. Multiplexed pins for data input and output. Disable or enable the command decoder. When command decoder is disabled, new command is ignored and previous operation continues.
2, 3, 5, 6, 8, 9, 11, 12, 39, 40, DQ0-DQ15 42, 43, 45, 46, 48, 49 18
CS
Data Input/ Output
Chip Select
17 16 15 36, 14
RAS
Command input. When sampled at the rising edge of Row Address the clock, RAS , CAS and WE define the operation Strobe to be executed. Column Address Strobe Referred to RAS Write Enable Input/Output Mask Clock Inputs Clock Enable Referred to RAS The output buffer is placed at Hi-Z (with latency of 2) when DQM is sampled high in read cycle. In write cycle, sampling DQM high will block the write operation with zero latency. System clock used to sample inputs on the rising edge of clock. CKE controls the clock activation and deactivation. When CKE is low, Power Down mode, Suspend mode, or Self Refresh mode is entered. Ground for input buffers and logic circuit inside DRAM.
CAS WE
UDQM/ LDQM CLK CKE VCC VSS VCCQ VSSQ NC
35 34 1, 25 26, 50 7, 13, 38, 44, 4, 10, 41, 47 33, 37
Power (+3.3V) Power for input buffers and logic circuit inside DRAM. Ground
Power (+3.3V) Separated power from VCC, used for output buffers to for I/O buffer improve noise immunity. Ground for I/O Separated ground from VSS, used for output buffers to improve noise immunity. buffer No Connection No connection. (NC pin should be connected to GND or floating)
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6. BLOCK DIAGRAM
CLK
CLOCK BUFFER
CKE
CS RAS CAS WE
COMMAND DECODER
CONTROL SIGNAL GENERATOR
COLUMN DECODER
R O W D E C O D E R
CELL ARRAY BANK #0
SENSE AMPLIFIER
A10
A0 A9 BA
ADDRESS BUFFER
MODE REGISTER
DATA CONTROL CIRCUIT
DQ BUFFER
DQ0 DQ15 LDQM UDQM
REFRESH COUNTER
COLUMN COUNTER
COLUMN DECODER
R O W D E C O D E R
CELL ARRAY BANK #1
SENSE AMPLIFIER
Note: The cell array configuration is 2048 * 256 * 16
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7. FUNCTIONAL DESCRIPTION
7.1 Power Up and Initialization
The default power up state of the mode register is unspecified. The following power up and initialization sequence need to be followed to guarantee the device being preconditioned to each user specific needs during power up, all VCC and VCCQ pins must be ramp up simultaneously to the specified voltage when the input signals are held in the "NOP" state. The power up voltage must not exceed VCC + 0.3V on any of the input pins or VCC supplies. After power up, an initial pause of 200 S is required followed by a precharge of all banks using the precharge command. To prevent data contention on the DQ bus during power up, it is required that the DQM and CKE pins be held high during the initial pause period. Once all banks have been precharged, the Mode Register Set Command must be issued to initialize the Mode Register. An additional eight Auto Refresh cycles (CBR) are also required before or after programming the Mode Register to ensure proper subsequent operation.
7.2
Programming Mode Register
After initial power up, the Mode Register Set Command must be issued for proper device operation. All banks must be in a precharged state and CKE must be high at least one cycle before the Mode Register Set Command can be issued. The Mode Register Set Command is activated by the low signals of RAS , CAS , CS and WE at the positive edge of the clock. The address input data during this cycle defines the parameters to be set as shown in the Mode Register Operation table. A new command may be issued following the mode register set command once a delay equal to tRSC has elapsed. Please refer to the next page for Mode Register Set Cycle and Operation Table.
7.3
Bank Activate Command
The Bank Activate command must be applied before any Read or Write operation can be executed. The operation is similar to RAS activate in EDO DRAM. The delay from when the Bank Activate command is applied to when the first read or write operation can begin must not be less than the RAS to CAS delay time (tRCD). Once a bank has been activated it must be precharged before another Bank Activate command can be issued to the same bank. The minimum time interval between successive Bank Activate commands to the same bank is determined by the RAS cycle time of the device (tRC). The minimum time interval between interleaved Bank Activate commands (Bank A to Bank B and vice versa) is the Bank-to-Bank delay time (tRRD). The maximum time that each bank can be held active is specified as tRAS(max.).
7.4
Read and Write Access Modes
After a bank has been activated, a read or write cycle can be followed. This is accomplished by setting RAS high and CAS low at the clock rising edge after minimum of tRCD delay. WE pin voltage level defines whether the access cycle is a read operation ( WE high), or a write operation ( WE low). The address inputs determine the starting column address. Reading or writing to a different row within an activated bank requires the bank be precharged and a new Bank Activate command be issued. When more than one bank is activated, interleaved bank Read or Write operations are possible. By using the programmed burst length and alternating the access and precharge operations between multiple banks, seamless data access operation among many different pages can be realized. Read or Write Commands can also be issued to the same bank or between active banks on every clock cycle. Publication Release Date:May 05, 2008 Revision A01
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7.5 Burst Read Command
The Burst Read command is initiated by applying logic low level to CS and CAS while holding RAS and WE high at the rising edge of the clock. The address inputs determine the starting column address for the burst. The Mode Register sets type of burst (sequential or interleave) and the burst length (1, 2, 4, 8 and full page) during the Mode Register Set Up cycle. Table 2 and 3 in the next page explain the address sequence of interleave mode and sequence mode.
7.6
Burst Write Command
The Burst Write command is initiated by applying logic low level to CS , CAS and WE while holding RAS high at the rising edge of the clock. The address inputs determine the starting column address. Data for the first burst write cycle must be applied on the DQ pins on the same clock cycle that the Write Command is issued. The remaining data inputs must be supplied on each subsequent rising clock edge until the burst length is completed. Data supplied to the DQ pins after burst finishes will be ignored.
7.7
Read Interrupted by a Read
A Burst Read may be interrupted by another Read Command. When the previous burst is interrupted, the remaining addresses are overridden by the new read address with the full burst length. The data from the first Read Command continues to appear on the outputs until the CAS Latency from the interrupting Read Command the is satisfied.
7.8
Read Interrupted by a Write
To interrupt a burst read with a Write Command, DQM may be needed to place the DQs (output drivers) in a high impedance state to avoid data contention on the DQ bus. If a Read Command will issue data on the first and second clocks cycles of the write operation, DQM is needed to insure the DQs are tri-stated. After that point the Write Command will have control of the DQ bus and DQM masking is no longer needed.
7.9
Write Interrupted by a Write
A burst write may be interrupted before completion of the burst by another Write Command. When the previous burst is interrupted, the remaining addresses are overridden by the new address and data will be written into the device until the programmed burst length is satisfied.
7.10 Write Interrupted by a Read
A Read Command will interrupt a burst write operation on the same clock cycle that the Read Command is activated. The DQs must be in the high impedance state at least one cycle before the new read data appears on the outputs to avoid data contention. When the Read Command is activated, any residual data from the burst write cycle will be ignored.
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7.11 Burst Stop Command
A Burst Stop Command may be used to terminate the existing burst operation but leave the bank open for future Read or Write Commands to the same page of the active bank, if the burst length is full page. Use of the Burst Stop Command during other burst length operations is illegal. The Burst Stop Command is defined by having RAS and CAS high with CS and WE low at the rising edge of the clock. The data DQs go to a high impedance state after a delay, which is equal to the CAS Latency in a burst read cycle, interrupted by Burst Stop. If a Burst Stop Command is issued during a full page burst write operation, then any residual data from the burst write cycle will be ignored.
7.12 Addressing Sequence of Sequential Mode
A column access is performed by increasing the address from the column address, which is input to the device. The disturb address is varied by the Burst Length as shown in Table 2. Table 2 Address Sequence of Sequential Mode
DATA ACCESS ADDRESS BURST LENGTH
Data 0 Data 1 Data 2 Data 3 Data 4 Data 5 Data 6 Data 7
n n+1 n+2 n+3 n+4 n+5 n+6 n+7
BL = 2 (disturb address is A0) No address carry from A0 to A1 BL = 4 (disturb addresses are A0 and A1) No address carry from A1 to A2 BL = 8 (disturb addresses are A0, A1 and A2) No address carry from A2 to A3
7.13 Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address bit in the sequence shown in Table 3. Table 3 Address Sequence of Interleave Mode
DATA ACCESS ADDRESS BURST LENGTH
Data 0 Data 1 Data 2 Data 3 Data 4 Data 5 Data 6 Data 7
A8 A7 A6 A5 A4 A3 A2 A1 A0 A8 A7 A6 A5 A4 A3 A2 A1 A0 A8 A7 A6 A5 A4 A3 A2 A1 A0 A8 A7 A6 A5 A4 A3 A2 A1 A0 A8 A7 A6 A5 A4 A3 A2 A1 A0 A8 A7 A6 A5 A4 A3 A2 A1 A0 A8 A7 A6 A5 A4 A3 A2 A1 A0 A8 A7 A6 A5 A4 A3 A2 A1 A0
BL = 2 BL = 4 BL = 8
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7.14 Auto-precharge Command
If A10 is set to high when the Read or Write Command is issued, then the Auto-precharge function is entered. During Auto-precharge, a Read Command will execute as normal with the exception that the active bank will begin to precharge automatically before all burst read cycles have been completed. Regardless of burst length, it will begin a certain number of clocks prior to the end of the scheduled burst cycle. The number of clocks is determined by CAS Latency. A Read or Write Command with Auto-precharge can not be interrupted before the entire burst operation is completed. Therefore, use of a Read, Write, or Precharge Command is prohibited during a read or write cycle with Auto-precharge. Once the precharge operation has started, the bank cannot be reactivated until the Precharge time (tRP) has been satisfied. Issue of Auto-precharge command is illegal if the burst is set to full page length. If A10 is high when a Write Command is issued, the Write with Auto-precharge function is initiated. The SDRAM automatically enters the precharge operation two clock delay from the last burst write cycle. This delay is referred to as Write tWR. The bank undergoing Auto-precharge can not be reactivated until tWR and tRP are satisfied. This is referred to as tDAL, Data-in to Active delay (tDAL = tWR + tRP). When using the Auto-precharge Command, the interval between the Bank Activate Command and the beginning of the internal precharge operation must satisfy tRAS(min).
7.15 Precharge Command
The Precharge Command is used to precharge or close a bank that has been activated. The Precharge Command is entered when CS , RAS and WE are low and CAS is high at the rising edge of the clock. The Precharge Command can be used to precharge each bank separately or all banks simultaneously. The address bits, A10, and BA, are used to define which bank(s) is to be precharged when the command is issued. After the Precharge Command is issued, the precharged bank must be reactivated before a new read or write access can be executed. The delay between the Precharge Command and the Activate Command must be greater than or equal to the Precharge time (tRP).
7.16 Self Refresh Command
The Self-Refresh Command is defined by having CS , RAS , CAS and CKE held low with WE high at the rising edge of the clock. All banks must be idle prior to issuing the Self-Refresh Command. Once the command is registered, CKE must be held low to keep the device in Self-Refresh mode. When the SDRAM has entered Self Refresh mode all of the external control signals, except CKE, are disabled. The clock is internally disabled during Self-Refresh Operation to save power. The device will exit Self-Refresh operation after CKE is returned high. Any subsequent commands can be issued after tRC from the end of Self Refresh command. If, during normal operation, Auto-Refresh cycles are issued in bursts (as opposed to being evenly distributed), a burst of 4,096 Auto-Refresh cycles should be completed just prior to entering and just after exiting the Self-Refresh mode.
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7.17 Power Down Mode
The Power Down mode is initiated by holding CKE low. All of the receiver circuits except CKE are gated off to reduce the power. The Power Down mode does not perform any refresh operations; therefore the device can not remain in Power Down mode longer than the Refresh period (tREF) of the device. The Power Down mode is exited by bringing CKE high. When CKE goes high, a No Operation Command is required on the next rising clock edge, depending on tCK. The input buffers need to be enabled with CKE held high for a period equal to tCKS(min) + tCK(min).
7.18 No Operation Command
The No Operation Command should be used in cases when the SDRAM is in an idle or a wait state to prevent the SDRAM from registering any unwanted commands between operations. A No Operation Command is registered when CS is low with RAS , CAS and WE held high at the rising edge of the clock. A No Operation Command will not terminate a previous operation that is still executing, such as a burst read or write cycle.
7.19 Deselect Command
The Deselect Command performs the same function as a No Operation Command. Deselect Command occurs when CS is brought high, the RAS , CAS and WE signals become don't cares.
7.20 Clock Suspend Mode
During normal access mode, CKE must be held high enabling the clock. When CKE is registered low while at least one of the banks is active, Clock Suspend Mode is entered. The Clock Suspend mode deactivates the internal clock and suspends any clocked operation that was currently being executed. There is a one-clock delay between the registration of CKE low and the time at which the SDRAM operation suspends. While in Clock Suspend mode, the SDRAM ignores any new commands that are issued. The Clock Suspend mode is exited by bringing CKE high. There is a one-clock cycle delay from when CKE returns high to when Clock Suspend mode is exited.
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8. OPERATION MODE
Fully synchronous operations are performed to latch the commands at the positive edges of CLK. Table 1 shows the truth table for the operation commands.
TABLE 1 TRUTH TABLE (NOTE 1, 2)
COMMAND DEVICE STATE CKEn-1 CKEn DQM BA A10 A9-A0
CS
L L L L L L L L L L H L L H L X H L X H L X X
RAS L L L H H H H L H H X L L X H X X H X X H X X
CAS H H H L L L L L H H X L L X H X X H X X H X X
WE
Bank Active Bank Precharge Precharge All Write Write with Auto-precharge Read Read with Auto-precharge Mode Register Set No-Operation Burst Stop Device Deselect Auto-Refresh Self-Refresh Entry Self-Refresh Exit Clock Suspend Mode Entry Power Down Mode Entry Clock Suspend Mode Exit Power Down Mode Exit Data Write/Output Enable Data Write/Output Disable
Idle Any Any Active Active Active Active Idle Any Active Any Idle Idle Idle (S.R) Active Idle (5) Active Active Any (power down) Active Active
(4) (3) (3) (3) (3)
H H H H H H H H H H H H H L L H H H L L L H H
X X X X X X X X X X X H L H H L L L H H H X X
X X X X X X X X X X X X X X X X X X X X X L H
V V X V V V V V X X X X X X X X X X X X X X X
V L H L H L H V X X X X X X X X X X X X X X X
V X X V V V V V X X X X X X X X X X X X X X X
H L L L L H H L H L X H H X X X X X X X X X X
Notes(1) V = Valid, X = Don't care, L = Low Level, H = High Level
(2) CKEn signal is input level when commands are provided. CKEn-1 signal is the input level one clock cycle before the command is issued. (3) These are state of bank designated by BA signals. (4) Device state is full page burst operation. (5) Power Down Mode can not be entered in the burst cycle. When this command asserts in the burst cycle, device state is clock suspend mode.
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9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER
Input, Output Voltage Power Supply Voltage Operating Temperature for -5/-6/-7 Operating Temperature for -6I/-7I Storage Temperature Soldering Temperature (10s) Power Dissipation Short Circuit Output Current
of the device.
SYMBOL
VIN, VOUT VCC, VCCQ TOPR TOPR TSTG TSOLDER PD IOUT
RATING
-1 ~ VCC + 0.3 -1~ 4.6 0 ~ 70 -40 ~ 85 -55 ~ 150 260 1 50
UNIT
V V C C C C W mA
NOTES
1 1 1 1 1 1 1 1
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
9.2
Recommended DC Operating Conditions
PARAMETER SYM.
VCC VCC VCCQ VCCQ VIH VIL
(TA = 0 to 70C for -5/-6/-7 , TA= -40 to 85C for -6I/-7I)
MIN.
3.0 2.7 3.0 2.7 2.0 -0.3
TYP.
3.3 3.3 3.3 3.3 -
MAX.
3.6 3.6 3.6 3.6 VCC + 0.3 0.8
UNIT
V V V V V V
NOTES
2 2 2 2 2 2
Power Supply Voltage for -5/-6/-6I Power Supply Voltage for -7/-7I Power Supply Voltage for -5/-6/-6I (for I/O Buffer) Power Supply Voltage for -7/-7I (for I/O Buffer) Input High Voltage Input Low Voltage
Note: VIH (max.) = VCC/VCCQ +1.5V for pulse width < 5 nS
VIL (min.) = VSS/VSSQ -1.5V for pulse width < 5 nS
9.3
Capacitance
PARAMETER SYM.
CI
(VCC = 3.3V, TA = 25 C, f = 1MHz)
MIN.
-
MAX.
4 4 5.5
UNIT
pf pf pf
Input Capacitance (A0 to A10, BA, CS , RAS , CAS , WE , UDQM, LDQM, CKE) Input Capacitance (CLK) Input/Output capacitance (DQ0 to DQ15)
Note: These parameters are periodically sampled and not 100% tested
CIO
-
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9.4 DC Characteristics
PARAMETER Operating Current tCK = min., t RC = min. Active precharge command cycling without burst operation Standby Current tCK = min., CS = VIH VIH /L = VIH (min.) / VIL (max.) Bank: inactive state Standby Current CLK = VIL, CS = VIH VIH/L = VIH (min.) / VIL (max.) Bank: inactive state No Operating Current tCK = min., CS = VIH (min.) Bank: active state (2 Banks) Burst Operating Current (t CK = min.) Read/ Write command cycling Auto Refresh Current (t CK = min.) Auto refresh command cycling Self Refresh Current (CKE = 0.2V) Self refresh mode SYM. -5 MAX. -6/-6I MAX. -7/-7I MAX. UNIT NOTES
(VCC = 3.3V 0.3V for -5/-6/-6I, VCC = 2.7V to 3.6V for -7/-7I, TA = 0 to 70C for -5/-6/-7, TA= -40 to 85C for -6I/-7I)
1 Bank Operation
ICC1
80
60
50
3
CKE = VIH CKE = VIL
(Power Down mode)
ICC2 ICC2P ICC2S ICC2PS ICC3 ICC3P ICC4
30 2 10 2 45 10 120
30 2 10 2 40 10 110
25 2 10 2 35 10 100 mA
3 3
CKE = VIH CKE = VIL
(Power Down mode)
CKE = VIH CKE = VIL
(Power Down mode)
3, 4
ICC5
60
55
50
3
ICC6
2
2
2
mA
PARAMETER Input Leakage Current (0V VIN VCC, all other pins not under test = 0V) Output Leakage Current (Output disable , 0V VOUT VCCQ ) LVTTL Output H Level Voltage (IOUT = -2 mA) LVTTL Output L Level Voltage (IOUT = 2 mA)
SYM. II(L) IO(L) VOH
MIN. -5 -5 2.4 -
MAX. 5 5 0.4
UNIT A A V V
NOTES
VOL
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9.5 AC Characteristics
-5 MIN. MAX. MIN. -6/-6I MAX. MIN. -7/-7I MAX.
(VCC = 3.3V 0.3V for -5/-6/-6I, VCC = 2.7V to 3.6V for -7/-7I, TA = 0 to 70C for -5/-6/-7, TA= -40 to 85C for -6I/-7I)
PARAMETER SYM. UNIT NOTES
Ref/Active to Ref/Active Command Period Active to Precharge Command Period Active to Read/Write Command Delay Time Read/Write(a) to Read/Write(b)Command Period Precharge to Active(b) Command Period Active(a) to Active(b) Command Period Write Recovery Time CLK Cycle Time CLK High Level Width CLK Low Level Width Access Time from CLK Output Data Hold Time Output Data High Impedance Time Output Data Low Impedance Time Power Down Mode Entry Time Data-in-Set-up Time Data-in Hold Time Address Set-up Time Address Hold Time CKE Set-up Time CKE Hold Time Command Set-up Time Command Hold Time Refresh Time Mode Register Set Cycle Time Exit self refresh to ACTIVE command CL* = 2 CL* = 3 CL* = 2 CL* = 3 CL* = 2 CL* = 3
tRC tRAS tRCD tCCD tRP tRRD tWR tCK tCH tCL tAC tOH tHZ tLZ tSB tDS tDH tAS tAH tCKS tCKH tCMS tCMH tREF tRSC tXSR
55 40 15 1 15 10 2 2 7 5 2 2 4.5 2 5 0 0 1.5 0.7 1.5 0.7 1.5 0.7 1.5 0.7 64 10 70 5 1000 1000 100000
60 42 18 1 18 12 2 2 8 6 2 2 5.5 5 2 2 0 0 1.5 0.7 1.5 0.7 1.5 0.7 1.5 0.7 64 12 72 6 6 1000 1000 100000
65 45 20 1 18 14 2 2 10 7 2 2 5.5 5 2 2.5 0 0 1.5 1 1.5 1 1.5 1 1.5 1 64 14 75 mS nS 7 7 nS 1000 1000 8 8 9 9 9 7 9 8 8 8 8 8 8 8 8 tCK nS tCK 100000 nS
- 15 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
Notes: 1. Operation exceeds " Absolute Maximum Ratings " may cause permanent damage to the devices. 2. All voltages are referenced to VSS. * 2.7V~3.6V power supply for -7/-7I speed grade. * 3.3V 0.3V power supply for -5/-6/-6I speed grades. 3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the minimum values of tCK and tRC. 4. These parameters depend on the output loading conditions. Specified values are obtained with output open. 5. Power up sequence please refer to "Functional Description" section described before. 6. AC Test Load diagram.
1.4 V
50 ohms
output
Z = 50 ohms 30pF
AC TEST LOAD
7. tHZ defines the time at which the outputs achieve the open circuit condition and is not referenced to output level. 8. Assumed input rise and fall time (tT ) = 1nS. If tr & tf is longer than 1nS, transient time compensation should be considered, i.e., [(tr + tf)/2-1]nS should be added to the parameter ( The tT maximum can't be more than 10nS for low frequency application. ) 9. If clock rising time (tT) is longer than 1nS, (tT /2-0.5)nS should be added to the parameter.
- 16 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
10. TIMING WAVEFORMS
10.1 Command Input Timing
tCK
tCL
tCH
CLK
VIH VIL
tT tCMS tCMH tCMH tT tCMS
CS
tCMS
tCMH
RAS
tCMS
tCMH
CAS
tCMS
tCMH
WE
tAS
tAH
A0-A10 BA
tCKS tCKH tCKS tCKH
tCKS
tCKH
CKE
- 17 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
10.2 Read Timing
Read CAS Latency
CLK
CS
RAS
CAS
WE
A0-A10 BA
tAC tLZ tOH
Valid Data-Out
tAC
tHZ tOH
Valid Data-Out
DQ
Read Command
Burst Length
- 18 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
10.3 Control Timing of Input/Output Data
Control Timing of Input Data
(Word Mask)
CLK
tCMH tCMS tCMH tCMS
DQM
tDS tDH
Valid Data-in
tDS
tDH
Valid Data-in
tDS
tDH
Valid Data-in
tDS
tDH
Valid Data-in
DQ0 -15
(Clock Mask)
CLK
tCKH tCKS tCKH tCKS
CKE
tDS tDH
Valid Data-in
tDS
tDH
Valid Data-in
tDS
tDH
Valid Data-in
tDS
tDH
Valid Data-in
DQ0 -15
Control Timing of Output Data
(Output Enable)
CLK
tCMH tCMS tCMH tCMS
DQM
tAC tOH tOH tAC tHZ tOH
Valid Data-Out
tLZ
tAC tOH
Valid Data-Out
tAC
DQ0 -15
Valid Data-Out
OPEN
(Clock Mask)
CLK
tCKH tCKS tCKH tCKS
CKE
tAC tOH tAC tOH
Valid Data-Out Valid Data-Out
tAC tOH tOH
Valid Data-Out
tAC
DQ0 -15
- 19 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
10.4 Mode Register Set Cycle
tRSC
CLK
tCMS tCMH
CS
tCMS tCMH
RAS
tCMS tCMH
CAS
tCMS tCMH
WE
tAS tAH
Register set data
A0-A10 BA
A0 A1 A2 A3 A4 A5 A6 A0 A7 A8 A0 A9 A10 A0 BA "0" "0" "0" "0" (Test Mode) Reserved A0 Write Mode Reserved CAS Latency Addressing Mode Burst Length
A2 0 0 0 0 1 1 1 1
A0 A0 A1 A0 0 A0 0 A0 1 A0 1 A0 0 A0 0 A0 1 A0 1 A3 A0 A0 0 A0 1
A0 0 1 0 1 0 1 0 1
next command BurstA0 Length A0 A0 Sequential Interleave 1 A0 1 A0 2 A0 2 A0 A0 4 4 A0 A0 8 8 A0 Reserved FullA0 Page Addressing Mode A0 A0 Sequential Interleave A0 A0 Reserved
A6 0 0 0 0 1
A0 A5 A0 0 A0 0 A0 1 A0 1 A0 0 A0 A9 A0 0 A0 1
A4 0 1 0 1 0
CAS A0 Latency A0 Reserved Reserved A0 2 A0 3 Reserved Single Write Mode Burst read and Burst write A0 A0 Burst read and single write
- 20 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11. OPERATING TIMING EXAMPLE
11.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)
(CLK = 100 MHz)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK CS
tRC tRC tRC tRC tRAS tRP tRP tRAS
RAS
tRAS tRP tRAS
CAS
WE
BA
tRCD tRCD
RBb RAc
tRCD
RBd
tRCD
RAe
A10
RAa
A0-A9 DQM
RAa
CAw
RBb
CBx
RAc
CAy
RBd
CBz
RAe
CKE
tAC tAC
aw0 aw1 aw2 aw3 bx0 bx1 bx2 bx3
tAC
cy0 cy1 cy2 cy3
tAC
DQ
tRRD
tRRD
tRRD
tRRD
Bank #0 Active Bank #1
Read Active
Precharge Read
Active
Read Precharge Active
Precharge Read
Active
- 21 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge)
(CLK = 100 MHz)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK CS
tRC tRC tRC tRC tRAS tRP tRP tRAS
RAS
tRAS tRP tRAS
CAS
WE
BA
tRCD tRCD
RBb RAc
tRCD
tRCD
RBd RAe
A10
RAa
A0-A9 DQM CKE
RAa
CAw RBb
CBx
RAc
CAy
RBd
CBz
RAe
tAC
tAC
aw0 aw1 aw2 aw3 bx0 bx1 bx2 bx3
tAC
cy0 cy1 cy2 cy3
tAC
dz0
DQ
tRRD
tRRD
tRRD
tRRD
Bank #0 Bank #1
Active
Read Active
AP* Read
Active
Read AP* Active
AP* Read
Active
* AP is the internal precharge start timing
- 22 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)
(CLK = 100 MHz)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
CS
tRC tRC tRC
RAS
tRAS tRP tRP tRAS tRAS tRP
CAS WE
BA
tRCD tRCD
RBb RAc
tRCD
A10
RAa
A0-A9 DQM
RAa
CAx
RBb
CBy
RAc
CAz
CKE
tAC tAC
ax0 ax1 ax2 ax3 ax4 ax5 ax6 by0 by1 by4 by5 by6
tAC
by7 CZ0
DQ
tRRD
tRRD
Bank #0 Bank #1
Active
Read Precharge Active Read
Precharge
Active
Read Precharge
- 23 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge)
(CLK = 100 MHz)
0 1 2 3 4 5 6 7 8
tRC
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK CS
tRC
RAS
tRAS tRP tRAS tRAS tRP
CAS
WE
BA
tRCD
tRCD
RBb RAc
tRCD
A10
RAa
A0-A9 DQM
RAa
CAx
RBb
CBy
RAc
CAz
CKE DQ
tCAC
ax0 ax1 ax2 ax3 ax4 ax5 ax6 ax7
tCAC
by0 by1 by4 by5
tCAC
by6 CZ0
tRRD
tRRD
Bank #0 Bank #1
Active
Read Active
AP* Read
Active
Read AP*
* AP is the internal precharge start timing
- 24 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.5 Interleaved Bank Write (Burst Length = 8)
(CLK = 100 MHz)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK CS
tRC
RAS
tRAS t RP tRAS
tRAS tRP
CAS
tRCD tRCD tRCD
WE
BA
A10
RAa
RBb
RAc
A0-A9 DQM
RAa
CAx
RBb
CBy
RAc
CAz
CKE DQ
ax0 ax1 ax4 ax5 ax6 ax7 by0 by1 by2 by3 by4 by5 by6 by7 CZ0 CZ1 CZ2
tRRD
t RRD
Bank #0 Bank #1
Active
Write Active Write
Precharge
Active
Write Precharge
- 25 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.6 Interleaved Bank Write (Burst Length = 8, Auto-precharge)
(CLK = 100 MHz)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK CS
tRC
RAS
tRAS tRP tRAS tRAS tRP
CAS
WE
BA
tRCD
tRCD
RBb RAb
tRCD
A10
RAa
A0-A9 DQM CKE DQ
RAa
CAx
RBb
CBy
RAc
CAz
ax0
ax1
ax4
ax5
ax6
ax7
by0
by1
by2
by3
by4
by5
by6
by7
CZ0
CZ1
CZ2
tRRD
tRRD
Bank #0 Active Bank #1
Write Active Write
AP*
Active
Write AP*
* AP is the internal precharge start timing
- 26 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3)
(CLK = 100 MHz)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
tCCD tCCD tCCD tRP tRAS tRP
CS
tRAS
RAS
CAS
WE
BA
tRCD tRCD
RBb
A10 A0-A9 DQM CKE
RAa
RAa
CAI
RBb
CBx
CAy
CAm
CBz
tAC
tAC
a0 a1 a2 a3 bx0 bx1
tAC
tAC
tAC
am0 am1 am2 bz0 bz1 bz2 bz3
DQ
tRRD
Ay0
Ay1
Ay2
Bank #0 Bank #1
Active
Read Active Read
Read
Read Read
Precharge AP*
* AP is the internal precharge start timing
- 27 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.8 Page Mode Read / Write (Burst Length = 8, CAS Latency = 3)
(CLK = 100 MHz)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK CS RAS CAS
tRAS
tRP
WE
BA
tRCD
A10
RAa
A0-A9
RAa
CAx
CAy
DQM CKE
tAC tWR
ax0 ax1 ax2 ax3 ax4 ax5 ay0 ay1 ay2 ay3 ay4
DQ
QQ
Q
Q
Q
Q
D
D
D
D
D
Bank #0 Bank #1
Active
Read
Write
Precharge
- 28 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.9 Auto Precharge Read (Burst Length = 4, CAS Latency = 3)
(CLK = 100 MHz) CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CS
tRC
tRC
RAS
tRAS
tRP
tRAS
tRP
CAS
WE
BA
tRCD
tRCD
RAb
A10
RAa
A0-A9 DQM CKE
RAa
CAw
RAb
CAx
tAC
tAC
aw0 aw1 aw2 aw3 bx0 bx1 bx2 bx3
DQ
Bank #0 Bank #1
Active
Read
AP*
Active
Read
AP*
* AP is the internal precharge start timing
- 29 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.10 Auto Precharge Write (Burst Length = 4)
(CLK = 100 MHz) CLK
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CS
tRC tRC
RAS
tRAS tRP tRAS tRP
CAS
WE
BA
tRCD tRCD
RAb RAc
A10 A0-A9 DQM CKE DQ
RAa
RAa
CAw
RAb
CAx
RAc
aw0
aw1
aw2
aw3
bx0
bx1
bx2
bx3
Bank #0 Bank #1
Active
Write
AP*
Active
Write
AP*
Active
* AP is the internal precharge start timing
- 30 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.11 Auto Refresh Cycle
(CLK = 100 MHz)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
tRP tRC tRC
CS
RAS
CAS
WE
BA
A10
A0-A9
DQM
CKE DQ
All Banks Prechage
Auto Refresh
Auto Refresh (Arbitrary Cycle)
- 31 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.12 Self Refresh Cycle
(CLK = 100 MHz)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
CS
tRP
RAS CAS
WE
BA
A10
A0-A9
DQM
tSB
tCKS
tCKS
CKE
tCKS
DQ
tXSR
Self Refresh Cycle All Banks Precharge Self Refresh Exit
No Operation / Command Inhibit
Self Refresh Entry
Arbitrary Cycle
- 32 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.13 Burst Read and Single Write (Burst Length = 4, CAS Latency = 3)
(CLK = 100 MHz)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
CS RAS CAS
tRCD
WE
BA
A10
RBa
A0-A9 DQM CKE
RBa
CBv
CBw
CBx
CBy
CBz
tAC
tAC
av0 Q av1 Q av2 Q av3 Q aw0 D ax0 D ay0 D az0 Q az1 Q az2 Q az3 Q
DQ
Bank #0 Active Bank #1
Read
Single Write
Read
- 33 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.14 Power Down Mode
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
RAS
CAS
WE
BA
A10
RAa
RAa
A0-A9
RAa
CAa
RAa
CAx
DQM
tSB tSB
CKE
tCKS tCKS
ax0 ax1 ax2
tCKS
ax3
tCKS
DQ
Active
NOP Read
Precharge
NOPActive Precharge Standby Power Down mode
Active Standby Power Down mode Note: The PowerDown Mode is entered by asserting CKE "low". All Input/Output buffers (except CKE buffers) are turned off in the Power Down mode. When CKE goes high, command input must be No operation at next CLK rising edge. Violating refresh requirements during power-down may result in a loss of data.
- 34 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.15 Auto-precharge Timing (Read Cycle)
0
(1) CAS Latency=2
( a ) burst length = 1 Command DQ ( b ) burst length = 2 Command DQ ( c ) burst length = 4 Command DQ ( d ) burst length = 8 Command DQ
1
AP
2
3
Act
4
5
6
7
8
9
10
11
Read
tRP
Q0 Read AP Q0 Read Q0 Read Q0 Q1 Q2 Q3 Q4 Q5 Q1
tRP
Act
Q1 AP
tRP
Act Q3 AP Q6
tRP
Q2
Act
Q7
(2) CAS Latency=3
( a ) burst length = 1 Command DQ ( b ) burst length = 2 Command DQ ( c ) burst length = 4 Command DQ ( d ) burst length = 8 Command
Read
AP
tRP
Act Q0
Read
AP
tRP
Act Q0 Q1 AP
tRP
Read Q0 Read Q0
Act Q2 Q3 AP
tRP
Q1
Act Q7
DQ
Q1
Q2
Q3
Q4
Q5
Q6
Note: Read AP Act represents the Read with Auto precharge command. represents the start of internal precharging. represents the Bank Activate command.
When the Auto precharge command is asserted, the period from Bank Activate command to the start of internal precgarging must be at least tRAS (min).
- 35 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.16 Auto-precharge Timing (Write Cycle)
0
1
2
3
4
5
6
7
8
9
10
11
12
CLK
(1) CAS Latency = 2
(a) burst length = 1
Command
Write
tWR
AP
tRP
Act
DQ
(b) burst length = 2
Command
D0
Write
tWR
AP
tRP
Act
DQ
(c) burst length = 4
Command
D0
Write
D1
AP
tWR
Act
tRP
DQ
(d) burst length = 8
Command
D0
Write
D1
D2
D3
AP
tWR
Act
tRP
DQ
(2) CAS Latency = 3
(a) burst length = 1 Command
D0
D1
D2
D3
D4
D5
D6
D7
Write
tWR
AP
tRP
Act
DQ
(b) burst length = 2 Command
D0
Write
tWR
AP
tRP
Act
DQ
(c) burst length = 4
Command
D0
Write
D1
AP
tWR
Act
tRP
DQ
(d) burst length = 8
Command
D0
Write
D1
D2
D3
AP
tWR
Act Act
tRP
DQ
D0
D1
D2
D3
D4
D5
D6
D7
Note )
Write
AP Act
represents the Write with Auto precharge command. represents the start of internal precharing. represents the Bank Active command.
When the /auto precharge command is asserted,the period from Bank Activate command to the start of intermal precgarging must be at least tRAS (min).
- 36 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.17 Timing Chart of Read to Write Cycle
In the case of Burst Length = 4
(1) CAS Latency=2
( a ) Command DQM DQ
0
1
2
3
4
5
6
7
8
9
10
11
Read Write
D0 Read
D1 Write D0
D2
D3
( b ) Command
DQM
DQ
D1
D2
D3
(2) CAS Latency=3
( a ) Command DQM
Read Write D0 Read D1 Write D0 D1 D2 D3 D2 D3
DQ ( b ) Command DQM
DQ
Note: The Output data must be masked by DQM to avoid I/O conflict
11.18 Timing Chart of Write to Read Cycle
In the case of Burst Length=4
0
(1) CAS Latency=2
( a ) Command DQM DQ ( b ) Command DQM DQ
1
2
3
4
5
6
7
8
9
10
11
Write Read D0 Write D0 D1 Read Q0 Q1 Q2 Q3 Q0 Q1 Q2 Q3
(2) CAS Latency=3
( a ) Command DQM DQ ( b ) Command DQM DQ
Write Read D0 Write D0 D1 Read Q0 Q1 Q2 Q3 Q0 Q1 Q2 Q3
- 37 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.19 Timing Chart of Burst Stop Cycle (Burst Stop Command)
0
(1) Read cycle ( a ) CAS latency =2
Command
1
2
3
4
5 BST
6
7
8
9
10
11
Read
Q0
Read
Q0
Q1
DQ
Q1
Q2
Q3
BST
Q2
Q4
( b )CAS latency = 3
Command
DQ
Q3
Q4
(2) Write cycle
Command
Write
BST
DQ
Q0
Q1
Q2
Q3
Q4
Note:
BST
represents the Burst stop command
11.20 Timing Chart of Burst Stop Cycle (Precharge Command)
0
(1) Read cycle (a) CAS latency =2
Command
1
2
3
4
5
6
7
8
9
10
11
Read
Q0
PRCG
Q1
DQ
Q2
Q3
Q4
(b) CAS latency =3
Command
Read
Q0
PRCG
Q1
DQ
Q2
Q3
Q4
(2) Write cycle (a) CAS latency =2
Command
Write
tWR
PRCG
DQM
DQ
Q0
Q1
Q2
Q3
Q4
(b) CAS latency =3
Command
Write
PRCG
tWR
DQM
DQ
Q0
Q1
Q2
Q3
Q4
- 38 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.21 CKE/DQM Input Timing (Write Cycle)
CLK cycle No.
1
2
3
4
5
6
7
External CLK Internal CKE DQM DQ
D1
D2
D3
DQM MASK (1)
D5
CKE MASK
D6
CLK cycle No.
1
2
3
4
5
6
7
External CLK Internal CKE DQM DQ
D1
D2
D3
DQM MASK (2) CKE MASK
D5
D6
CLK cycle No. External CLK Internal CKE DQM DQ
1
2
3
4
5
6
7
D1
D2
D3
CKE MASK (3)
D4
D5
D6
- 39 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
11.22 CKE/DQM Input Timing (Read Cycle)
CLK cycle No.
1
2
3
4
5
6
7
External CLK Internal CKE DQM DQ
Q1
Q2
Q3
Q4
Open Open
Q6
(1)
CLK cycle No.
1
2
3
4
5
6
7
External CLK Internal CKE DQM DQ
Q1
Q2
Q3
Q4
Open
Q6
(2)
CLK cycle No.
1
2
3
4
5
6
7
External CLK Internal CKE DQM DQ
Q1
Q2
Q3
Q4
Q5
Q6
(3)
- 40 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
12. PACKAGE SPECIFICATION
12.1 50L-TSOP (II) 400 mill
50
26
E
HE
1 e D b
25
C
q A2 A ZD L L1
Y
SEATING PLANE
A1
Controlling Dimension: Millimeters
DIMENSION(MM)
SYM.
DIMENSION (INCH) MIN. NOM. MAX.
0.047 0.006 0.043 0.018 0.008 0.830 0.405 0.471 0.024 0.004 0.031 0o 10 o
MIN.
NOM.
MAX.
1.20 0.15 1.10 0.45 0.20 21.08 10.29 11.96 0.60 0.10
A
A1 A2 b c D E HE e L L1 Y ZD 0.40 0.05 0.90 0.30 0.10 20.82 10.03 11.56 0.10 1.00 0.15 20.95 10.16 11.76 0.80 0.50 0.80 0.88 0o
0.002 0.035 0.012 0.004 0.820 0.395 0.455 0.016
0.004 0.039 0.006 0.825 0.400 0.463 0.031 0.020 0.031
10
o
- 41 -
Publication Release Date:May 05, 2008 Revision A01
W9816G6IH
13. REVISION HISTORY
VERSION DATE PAGE DESCRIPTION
A01
May 05, 2008
All
Initial formal data sheet
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, or for other applications intended to support or sustain life. Further more, Winbond products are not intended for applications wherein failure of Winbond products could result or lead to a situation wherein personal injury, death or severe property or environmental damage could occur. Winbond customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Winbond for any damages resulting from such improper use or sales.
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Publication Release Date:May 05, 2008 Revision A01

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